S. Ilias, B. Bourliaguet, C. Paré, A. Paquet, C. Alain, H. Jerominek "Si3N4-based photonic crystal membranes" Proc. of SPIE, 5347:271-281, 2004
Résumé: We describe the fabrication process of silicon nitride (Si 3N4 based two-dimensional photonic crystals. The fabrication process mainly involves e-beam direct-write lithography and reactive ion etching. The concerned photonic crystal structures consist of a periodic arrangement of sub-micrometric holes transferred into a suspended Si 3N4 membrane using a poly-methylmethacrylate resist layer as a mask. Numerical simulations based on a plane wave expansion method for 2D photonic band gap approximation were conducted to determine the design parameters of the photonic crystal membranes. Flat and stress free photonic crystal membranes were achieved with very good control in sidewall profile and feature shape.
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